| 摘要 |
<p>A device (1) for emitting electrons, comprising a substrate (3), an insulating film (4) formed on a surface of the substrate (3) and having a recess (9), an emitter electrode (7) formed on the insulating film (4) and having an edge portion (10) located at the recess (9), the edge portion (10) of the emitter electrode being formed in the form of an arch within a plane perpendicular to the surface of the substrate so as to be sharpened toward a distal end of the emitter electrode (7), the edge portion (10) of the emitter electrode (7) being sharpened also in a planar direction parallel to the surface of the substrate (3) toward the distal end of the emitter electrode (7) so as to have a linear portion (7a) at the distal end, and the edge portion (10) of the emitter electrode (7) being adapted to emit electrons from the linear portion (7a) when an electric field is applied to the edge portion (10) of the emitter electrode (7), and a gate electrode (8) formed on the insulating structure (4) and having an edge portion (137) located at the recess (9) and opposing the edge portion (10) of the emitter electrode (7) via a gap (6), the edge portion (13) of the gate electrode (8) being adapted to apply an electric field to the linear portion (7a) of the emitter electrode (7) via the gap (6) when a potential difference is given between the gate electrode (8) and the emitter electrode (7). <IMAGE></p> |
