Method of manufacturing semiconductor device utilizing selective CVD method.

摘要

A method of manufacturing semiconductor devices, which comprises the steps of forming a first conductive region of a first conductive material for effecting a growth of a conductive film thereon by a selective growth method. A second conductive region of a second conductive material for not effecting a growth of a conductive film is formed in the selective growth method. An insulating layer is covered with the first and second conductive regions. A through hole in the insulating layer for filling the hole with the conductive film is formed. The conductive film is grown within said through hole over the first conductive region, thereby filling the through hole with the conductive film.