| 摘要 |
A method for selecting a semiconductor laser is provided which contributes to improved productivity of a highly reliable semiconductor laser of prolonged lifetime, and which includes the steps of: (a) measuring highest peak intensity, Ia, and next highest peak intensity, Ib, of an interference fringes pattern of laser radiation of each semiconductor laser using an interferometer to find a damping ratio of visibility of the interference fringes pattern, gamma =Ib/Ia; and (b) selecting a semiconductor exhibiting self-pulsation by selecting a semiconductor laser which emits laser radiation whose damping ratio of visibility, gamma , is 0.5 or less.
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