发明名称 |
METHOD AND APPARATUS FOR PRODUCING THIN FILMS |
摘要 |
To deposit a film on a substrate (22) by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures, a substrate is placed within a reaction chamber (12) and a first gas is excited upstream of the substrate to generate activated radicals of the first gas. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. Rotation of the substrate draws the gas mixture down to the substrate surface in a laminar flow (29) to reduce recirculation and radical recombination. Another method utilizes a gas-dispersing showerhead (298) that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface.
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申请公布号 |
WO9533867(A1) |
申请公布日期 |
1995.12.14 |
申请号 |
WO1994US13641 |
申请日期 |
1994.12.23 |
申请人 |
MATERIALS RESEARCH CORPORATION |
发明人 |
FOSTER, ROBERT, F.;HILLMAN, JOSEPH, T.;LEBLANC, RENE, E. |
分类号 |
C23C16/50;C23C16/00;C23C16/04;C23C16/14;C23C16/30;C23C16/34;C23C16/42;C23C16/44;C23C16/452;C23C16/455;C23C16/458;C23C16/509;C23C16/56;H01L21/205;H01L21/28;H01L21/285;H01L51/30;(IPC1-7):C23C16/44 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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