发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700 DEG C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
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申请公布号 |
US5500559(A) |
申请公布日期 |
1996.03.19 |
申请号 |
US19940249127 |
申请日期 |
1994.05.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;EBARA CORPORATION |
发明人 |
MIYATA, MASAHIRO;EZAWA, HIROKAZU;OGURE, NAOAKI;TSUJIMURA, MANABU;OHDAIRA, TAKEYUKI;INOUE, HIROAKI;IKEDA, YUKIO |
分类号 |
H01L23/52;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L31/06 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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