| 摘要 |
A static-type memory cell includes a flip-flop circuit formed with a pair of N-channel type MOS transistors for driving provided in a semiconductor substrate and a pair of P-channel type MOS transistor as load elements provided in the upper layer of the pair of driving N-channel type MOS transistors and formed with thin film transistors. The gate electrodes of the pair of P-channel type MOS transistor are load elements and are formed of polycrystalline silicon layers containing 2 to 45 atoms % of oxygen for maintaining high resistance in the P-channel type MOS transistor and thereby provide satisfactory resistance against soft errors.
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