| 发明名称 |
Interconnect and method of manufacture for semiconductor devices |
| 摘要 |
<p>A BiCMOS method and device are disclosed. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS. <IMAGE></p> |
| 申请公布号 |
EP0450375(B1) |
申请公布日期 |
1996.05.15 |
| 申请号 |
EP19910104089 |
申请日期 |
1991.03.16 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
ILDEREM, VIDA;SOLHEIM, ALAN G.;JEROME, RICK C. |
| 分类号 |
H01L21/285;H01L21/336;H01L21/8238;H01L21/8249;H01L23/522;H01L27/06;H01L27/092;(IPC1-7):H01L27/06;H01L21/824 |
主分类号 |
H01L21/285 |
| 代理机构 |
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