发明名称 Voltage translation and overvoltage protection
摘要 A voltage translator is provided that translates a lower voltage to a higher voltage, for example, a 3.3 V voltage to a 5.0 V voltage. The 3.3 V voltage is received on source/drain terminal N1 of an NMOS transistor. The transistor gate is at 3.3 V. The other source/drain terminal N2 of the transistor is connected to an input of a CMOS inverter powered by 5.0 V. The inverter output is connected to the gate of a PMOS transistor connected between 5.0 V and terminal N2. The PMOS transistor pulls terminal N2 to 5.0 V when terminal N1 is at 3.3 V. The same translator is suitable for translating a 5.0 V voltage on terminal N1 to 3.3 V on terminal N2 if the inverter is powered by 3.3 V and the PMOS transistor is connected between 3.3 V and terminal N2. Also, an output driver is provided in which a voltage protection circuitry prevents charge leakage from the driver output terminal to the driver's power supply when the voltage on the bus connected to the output terminal exceeds the power supply voltage.
申请公布号 US5534795(A) 申请公布日期 1996.07.09
申请号 US19940352482 申请日期 1994.12.09
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 WERT, JOSEPH D.;DUNCAN, RICHARD L.
分类号 H03K19/00;H03K19/003;H03K19/017;H03K19/0175;H03K19/0185;(IPC1-7):H03K19/018;H03K19/094 主分类号 H03K19/00
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