发明名称 Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same
摘要 A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.
申请公布号 US5550070(A) 申请公布日期 1996.08.27
申请号 US19940357653 申请日期 1994.12.16
申请人 SHARP KABUSHIKI KAISHA 发明人 FUNAI, TAKASHI;MAKITA, NAOKI;YAMAMOTO, YOSHITAKA;MORITA, TATSUO
分类号 H01L21/20;H01L21/336;(IPC1-7):H01L21/336;H01L21/265 主分类号 H01L21/20
代理机构 代理人
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