发明名称 |
Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallization and semiconductor device having the same |
摘要 |
A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amorphous semiconductor film; (c) crystallizing the amorphous semiconductor film by heating to obtain a crystalline semiconductor film from the amorphous semiconductor film; and (d) oxidizing a surface of the crystalline semiconductor film to form a semiconductor oxide film containing a part of the material for accelerating the crystallization on the surface of the crystalline semiconductor film.
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申请公布号 |
US5550070(A) |
申请公布日期 |
1996.08.27 |
申请号 |
US19940357653 |
申请日期 |
1994.12.16 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUNAI, TAKASHI;MAKITA, NAOKI;YAMAMOTO, YOSHITAKA;MORITA, TATSUO |
分类号 |
H01L21/20;H01L21/336;(IPC1-7):H01L21/336;H01L21/265 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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