发明名称 |
Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact |
摘要 |
A method of fabricating a self-aligned FET having a semi-insulating substrate of GaAs or InP with a conductive channel formed either by doping the surface or an epitaxially grown channel by molecular beam epitaxy or metalorganic vapor phase epitaxy in the substrate adjacent the surface. Forming a high temperature stable LaB6/TiWN "T-shaped" Schottky gate contact on the substrate surface, which is used for source and drain ohmic region implants into the substrate adjacent to the surface and self-aligned to the "T-shaped" gate, with source and drain ohmic contacts also self-aligned with respect to the gate.
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申请公布号 |
US5550065(A) |
申请公布日期 |
1996.08.27 |
申请号 |
US19940344911 |
申请日期 |
1994.11.25 |
申请人 |
MOTOROLA |
发明人 |
HASHEMI, MAJID M.;TEHRANI, SAIED N.;NORTON, PATRICIA A. |
分类号 |
H01L21/285;H01L21/338;H01L29/417;H01L29/423;H01L29/47;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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