发明名称 PROTECTIVE CIRCUIT FOR SERIES-CONNECTED POWER SEMICONDUCTORS
摘要 <p>An overvoltage protection device (SK) of a transient protection type in a series-connection of an arbitrary number of power semiconductors (T1, D1), intended to reduce the risk of overvoltage across a power semiconductor in a chain (P1,...PN) of series-connected power semiconductors (T1, D1), wherein the overvoltage protection device (SK) comprises at least one capacitor (C) and wherein the overvoltage protection device (SK) is activated when the voltage across the power semiconductor (T1, D1) exceeds the specified voltage level (Vprot), whereby the task of said capacitor (C) is to limit the voltage derivative (dVCE/dt) across the power semiconductor when the voltage across the power semiconductor exceeds the specified voltage level (Vprot). The overvoltage protection device limits too high a voltage growth across individual power semiconductors in the chain.</p>
申请公布号 WO1996027230(A1) 申请公布日期 1996.09.06
申请号 SE1996000265 申请日期 1996.03.01
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