Photoresist compositions

摘要

A radiation-sensitive composition comprising, based on the total amount of components A, B and C, (A) 60-97.9% by weight of at least one polymer having a mean molecular weight Mw (weight average) of from 4000 to 1,000,000 (measured by gel permeation chromatography) and comprising structural repeating units of the formulae I-IV <CHEM> <CHEM> <CHEM> <CHEM> in which R1, R2, R3 and R4, independently of one another, are hydrogen, methyl or halogen, R5 and R6, independently of one another, are C1-C6alkyl or unsubstituted or mono- or poly-C1-C4alkyl-substituted cycloalkyl, R7, R8, R9 and R10, independently of one another, are hydrogen, C1-C6alkyl, C1-C6alkoxy or halogen, G is a methyl group, or G and R5, together with the O and C atoms bonded to these radicals, form a five- to eight-membered ring, L is a methyl group, or L and R6, together with the O and C atoms bonded to these radicals, form a five- to eight-membered ring, w, x, y and z are numbers which are equal to or greater than one, with the proviso that 0.05 ≤ Q ≤ 0.40, where the quotient Q = (w + y)/(w + x + y + z), obtainable from the total number of structural the total number of all structural units present, (B) 2-39.9% by weight of a dissolution inhibitor comprising one or more compounds having a molecular weight of up to 3000 containing at least one acid-labile C-O-C or C-O-Si bond, and (C) 0.1-20% by weight of a substance which forms an acid on exposure to actinic radiation, has a long shelf life, good process stability and a high resolution capacity and is particularly suitable as a DUV photoresist.