发明名称 Semiconductor memory device capable of data transfer between memory arrays coupled to different data pins and operating method thereof
摘要 A dual port random access memory capable of inputting/outputting data bit by bit includes a plurality of memory cell arrays (100a, 100b, 100c, 100d) accessible in parallel, a plurality of data registers (9a, 9b, 9c, 9d) arranged to be connected to memory arrays, and transfer gates (8a', 8b', 8c', 8d') for selectively connecting each of the data registers to one memory array in response to a destination designating signal. The transfer gate includes elements (T1, T2) for connecting the data registers and the memory arrays such that each of the plurality of memory arrays is connected to different data registers. Each of the data registers is capable of transferring data of one row of the memory array at one time. The data register is capable of serially inputting and outputting data. This structure enables rearrangement of data and transfer of data row by row between memory arrays in the memory device.
申请公布号 US5566371(A) 申请公布日期 1996.10.15
申请号 US19940282763 申请日期 1994.07.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OGAWA, TOSHIYUKI
分类号 G11C11/401;G11C7/10;G11C11/41;(IPC1-7):G11C8/00 主分类号 G11C11/401
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