SEMICONDUCTOR DEVICE HAVING PLANAR TYPE HIGH WITHSTAND VOLTAGE VERTICAL DEVICES, AND PRODUCTION METHOD THEREOF

摘要

An IGBT having a high withstand voltage, small power consumption and small device formation area. An n<--> type semiconductor layer (38) is provided at a portion which is likely to cause surface breakdown, and an n<-> type semiconductor layer (36) is disposed below the former. Therefore, the theoretical withstand voltage in the n<--> type semiconductor layer (38) is higher than the theoretical withstand voltage in the n<-> type semiconductor layer (36), and the surface breakdown voltage can be correspondingly increased. Since the n<-> type semiconductor layer (36) having a lower resistance is disposed below the n<--> type semiconductor layer (38), the region which affects power consumption of the IGBT has a lower resistance, and power consumption becomes smaller.