发明名称 半導体装置
摘要 An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.
申请公布号 JP5993055(B2) 申请公布日期 2016.09.14
申请号 JP20150081479 申请日期 2015.04.13
申请人 株式会社半導体エネルギー研究所 发明人 坂田 淳一郎;佐々木 俊成;細羽 みゆき
分类号 H01L29/786;G02F1/1368;H01L21/336;H01L21/477;H01L51/50;H05B33/14 主分类号 H01L29/786
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