发明名称 Improvements in or relating to semiconductor integrated circuit devices
摘要 <p>Fabricating a top lead fuse includes: (a) forming a conductive top lead fuse on a layer of insulator material; (b) depositing a top insulator over the top lead fuse at a top to side wall thickness ratio of at least 1:1; and (c) anisotropically etching the top insulator back universally to a top to side wall thickness ratio approx. 1:2 to 4:4.</p>
申请公布号 EP0740332(A2) 申请公布日期 1996.10.30
申请号 EP19960302824 申请日期 1996.04.23
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 BOKU, KATSUSHI
分类号 H01L21/82;H01L21/768;H01L23/525;(IPC1-7):H01L21/31 主分类号 H01L21/82
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