发明名称 |
Improvements in or relating to semiconductor integrated circuit devices |
摘要 |
<p>Fabricating a top lead fuse includes: (a) forming a conductive top lead fuse on a layer of insulator material; (b) depositing a top insulator over the top lead fuse at a top to side wall thickness ratio of at least 1:1; and (c) anisotropically etching the top insulator back universally to a top to side wall thickness ratio approx. 1:2 to 4:4.</p> |
申请公布号 |
EP0740332(A2) |
申请公布日期 |
1996.10.30 |
申请号 |
EP19960302824 |
申请日期 |
1996.04.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BOKU, KATSUSHI |
分类号 |
H01L21/82;H01L21/768;H01L23/525;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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