发明名称 High-withstand-voltage integrated circuit for driving a power semiconductor device
摘要 In a high-withstand-voltage integrated circuit, several circuits are included at different potentials. Each circuit of a different potential has a power source, and interface circuits mediate signals between the circuits of different potentials. By this design, the required number of high-withstand-voltage elements is reduced, and a low-cost, high-withstand-voltage IC with high integration density, surge tolerance and stability is obtained.
申请公布号 US5576655(A) 申请公布日期 1996.11.19
申请号 US19950394185 申请日期 1995.02.24
申请人 FUJI ELECTRIC CO., LTD. 发明人 FUJIHIRA, TATSUHIKO;NISHIURA, MASAHARU
分类号 H01L27/02;H01L27/088;(IPC1-7):H03K3/01 主分类号 H01L27/02
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