发明名称 |
Semiconductor device having CMOS circuit |
摘要 |
Disclosed is a CMOS integrated circuit, in which a high voltage circuit with both positive and negative polarities and a large scale low voltage circuit are formed on the same chip. The high voltage circuit is composed of a CMOS circuit having an nMOS transistor formed on a p-type semiconducting substrate, and a pMOS transistor formed in an n-well formed on the p-type semiconducting substrate. The low voltage circuit is composed of a CMOS circuit having a pMOS transistor which is formed in an n-well formed on the p-type semiconducting substrate, and an nMOS transistor formed in a p-well formed in the n-well.
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申请公布号 |
US5576570(A) |
申请公布日期 |
1996.11.19 |
申请号 |
US19950438366 |
申请日期 |
1995.05.10 |
申请人 |
SONY CORPORATION |
发明人 |
OHSAWA, NOBUHIKO;ITO, SHINICHI;ABE, HIDESHI |
分类号 |
H01L21/8238;H01L27/02;H01L27/092;H01L29/10;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L29/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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