| 摘要 |
forming a pad oxide film(6), the first nitride film(2), the first oxide film(3), the second nitride film(4) and the second oxide film(7) on a semiconductor substrate(1) in sequence; forming a remained second nitride film(4') by etching the second oxide film(7) and the second nitride film(4); forming the third oxide film(8) to form a spacer, and spacer-etching of the third oxide film(8), and etching the remained second nitride film(4'), the first oxide film(3), the first nitride film(2) and the pad oxide film(6); removing the remained third oxide film(8) and the second oxide film(7); forming a field oxide film(5) by a thermal oxidation; removing the second nitride film(4) and the first oxide film(3); and oxidizing the first nitride film(2) to remove the oxidized first nitride film and the pad oxide film(6).
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