| 发明名称 |
Method for forming conductors in integrated circuits |
| 摘要 |
<p>A method of forming electromigration resistant integrated circuit runners is disclosed. A collimated beam of particles is directed toward a substrate to form a metal nucleating layer 17. Then a non-collimated beam is used to form the rest of the metal layer 19. Then the layers 17, 19 are patterned to form runners. <IMAGE></p> |
| 申请公布号 |
EP0752718(A2) |
申请公布日期 |
1997.01.08 |
| 申请号 |
EP19960304668 |
申请日期 |
1996.06.25 |
| 申请人 |
AT&T CORP. |
发明人 |
CHITTIPEDDI, SAILESH;MERCHANT, SAILESH MANSINH |
| 分类号 |
H01L21/285;H01L21/203;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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