PROCEDE DE REALISATION DE COMPOSANTS SEMICONDUCTEURS, NOTAMMENT SUR GAAS OU INP, AVEC RECUPERATION DU SUBSTRAT PAR VOIE CHIMIQUE.

摘要

The method is characterized by the steps consisting in: a) producing a semi-insulating or n-type substrate; b) forming a separating layer of a p+-type doped material on the surface of said substrate; c) forming an active layer on said separating layer, the active layer including at least a bottom layer with n-type doping; d) making a set of semiconductor components by etching and metalizing said active layer; g) fixing a common support plate on the assembly made in this way, thereby holding the components together mechanically; and h) dissolving the material of the separating layer anodically and without illumination while leaving the other materials intact, thereby separating the substrate from said components without dissolving the substrate.