发明名称 |
Method of manufacturing coulamb blockade element using thermal oxidation |
摘要 |
A Coulomb-blockade element includes a silicon layer formed on a substrate through an insulating film. The silicon layer includes a narrow wire portion and first and second electrode portions. The narrow wire portion serves as a conductive island for confining a charge. The first and second electrode portions are formed to be connected to the two ends of the narrow wire portion and are wider than the narrow wire portion. Each of the first and second electrode portions has constrictions on at least one of the upper and lower surfaces thereof, which make a portion near the narrow wire portion thinner than the narrow wire portion.
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申请公布号 |
US5604154(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19950546529 |
申请日期 |
1995.10.20 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
TAKAHASHI, YASUO;NAGASE, MASAO;FUJIWARA, AKIRA |
分类号 |
H01L21/335;H01L29/76;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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