| 摘要 |
A semiconductor package is provided in which an electrical port is formed on the surface of a plastic package using an electrode bar to enable vertical stacking of packages, increasing the memory capacity of a memory device. When data or signal is applied to a semiconductor chip 1, the signal is transmitted to the semiconductor chip 1 through external and inner leads 5 and 6 and wire bonded gold wire 2. This signal is simultaneously sent to the electrode bar 8 through the external and inner leads 5 and 6. When a specific signal or data is outputted from the semiconductor chip 1, the specific signal is outputted through the wire bonded gold wire 2 and external and inner leads 5 and 6, and simultaneously sent to the electrode bar 8 through them. Accordingly, when plastic packages are stacked in multilayer structure, input/output of data is simultaneously carried out to/from the upper and lower packages through the electrode bar and external and inner leads, thereby facilitating extension in the memory device and increasing its memory capacity.
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