发明名称 Mask for manufacturing semiconductor device and method of manufacture thereof
摘要 The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180 DEG is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.
申请公布号 US5631108(A) 申请公布日期 1997.05.20
申请号 US19950449926 申请日期 1995.05.25
申请人 HITACHI, LTD. 发明人 OKAMOTO, YOSHIHIKO
分类号 G03F1/08;G03F1/00;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03F9/00 主分类号 G03F1/08
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