| 摘要 |
The varicap comprises a semiconductor with ohmic contact on the surface of which is formed a p-n junction or Schottky barrier with another contact; the semiconductor takes the form of a film (2) on a substrate (1). The working region of the film defined by the expression 0 </= x </= Xmax, zl(x) </= z </= z2(x) has either a non-homogeneous (along x and y) distribution profile of dopant Ni(x, y), or a non-homogeneous (along x) film profile D(x), or a non-homogeneous distribution profile of dopant and film or, beneath the working region of the film, a substrate made from a semiconductor material of conductivity type opposite to that of the film and provided with a dopant profile which is non-homogeneous along x. The choice of the doping profile and film thickness is subject to the condition that the working region of the film or part of it should be completely depleted by basic charge carriers until breakthrough of the p-n junction or Schottky barrier (formed on one of the surfaces of the working region of the film), an external bias being applied to it as defined by the equation given in the application. The ohmic contact (3) with the film (2) takes the form of interconnected strips or a single strip.
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