Method for forming an epitaxial layer sequence in a component and optoelectronic semiconductor chip

摘要

Process for preparation of an epitaxial structural element based on a first group III/V compound semiconductor material system (SMS) with a first group V element on a substrate or buffer layer, which includes a material based on a second group III/V element SMS with a second group V element different from the first one, where prior to application of the epitaxial layer sequence, a layer sequence with different first and second group III/V compound SMS is applied.