SUBSTRAT ET PROCEDE DE FABRICATION D'UN SUBSTRAT

摘要

A substrate (1) for producing transistors having fully depleted channels, with the substrate comprising the following stacking: - a support (6) comprising contaminant species liable to diffuse; - a barrier layer for encapsulating (5) the support and able to prevent the diffusion of the contaminant species; - an intermediate layer (4) made of a polycrystalline or amorphous semiconductor material on the encapsulation barrier layer (5); - an electrically insulating layer (3) having a thickness ranging from 2 to 50 nanometers on the intermediate layer ( 4 ); - a semiconductive upper layer (2) having a thickness ranging from 2 to 50 nanometers on the electrically insulating layer (3) and free of contaminant species.