Semiconductor device and method for manufacturing the same

摘要

The present invention is provided in order to suppress a leak current at an emitter-base junction and to implement a high-speed operation of a bipolar transistor. An n+ buried layer is formed at a surface of a p- silicon substrate. An n- epitaxial growth layer and an n+ diffused layer are formed on n+ buried layer. A p+ external base region and a p- base region are formed at a surface of n- epitaxial growth layer so as to be adjacent to each other. A first interlayer insulating layer having an opening is formed on p- base region. A groove which is located under opening and extends under first interlayer insulating layer is formed at a surface of p- base region. An n+ emitter region is formed at a bottom surface of groove within p- base region. A sidewall insulating layer is formed so as to expose n+ emitter region and to cover a sidewall of opening and to come into contact with a bottom surface of first interlayer insulating layer.