发明名称 |
Semiconductor surface-emitting optical device having light emitting layer of ordered crystal structure sandwiched between bragg reflectors |
摘要 |
An active layer incorporated in a semiconductor surface-emitting optical device is formed of the ordered crystal of GaInP or AlGaInP so that unisotropical photoluminescent characteristics take place in the light generation, and the semiconductor surface-emitting optical device selectively oscillates at a plane of polarization.
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申请公布号 |
US5675605(A) |
申请公布日期 |
1997.10.07 |
申请号 |
US19960610413 |
申请日期 |
1996.03.04 |
申请人 |
NEC CORPORATION |
发明人 |
FUJII, HIROAKI |
分类号 |
H01L33/06;H01L33/10;H01L33/30;H01S5/00;H01S5/183;H01S5/32;H01S5/343;(IPC1-7):H01S3/19 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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