发明名称 |
Method for fabricating semiconductor device |
摘要 |
A semiconductor substrate 11 having concavities and convexities in the upper surface, and silica particles (granular insulators) 15 provided in the concavities to planarize the entire upper surface of the semiconductor substrate 11 are included. First, the silica particles 15 are laid over an upper surface of a semiconductor substrate 11 to provide the granular insulators 15 in cavities in the upper surface of the semiconductor substrate 11, and the silica particles 15 provided on convexities on the upper surface of the semiconductor substrate 11 are removed, whereby the concavities 11 are buried with the silica particles 15 so as to improve global planarizarion.
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申请公布号 |
US5691237(A) |
申请公布日期 |
1997.11.25 |
申请号 |
US19950455521 |
申请日期 |
1995.05.31 |
申请人 |
FUJITSU LIMITED |
发明人 |
OHKURA, YOSHIYUKI;HARADA, HIDEKI;OSHIMA, TADASI |
分类号 |
H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/310 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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