发明名称 |
Semiconductor device comprising two semiconductor substrates |
摘要 |
A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement. <IMAGE> |
申请公布号 |
EP0813246(A2) |
申请公布日期 |
1997.12.17 |
申请号 |
EP19970115110 |
申请日期 |
1995.08.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGIYAMA, TATSUO;HIRAO, SHUJI;YANO, KOUSAKU;NOMURA, NOBORU |
分类号 |
H01L21/98;H01L25/065 |
主分类号 |
H01L21/98 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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