Method and arrangement for the analysis of the response of optically excited semiconductor materials

摘要

The method involves stimulating electronic energy deposition in an object (4) in the form of stimulated charge carriers using a laser (1) beam; the relaxation of the stimulated charge carriers is measured (5) as luminescent radiation emanating from the object. The stimulating laser beam is intensity modulated, whereby the frequency spectrum has two discrete modulation frequencies (Omega1, Omega2). The luminescent light emanating from the object is measured to determine the difference between the modulation frequencies. The luminescent light is analysed as a function of the arithmetic mean of the modulation frequencies.