发明名称 |
Growth of colorless silicon carbide crystals |
摘要 |
Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal to levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.
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申请公布号 |
US5718760(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19960596526 |
申请日期 |
1996.02.05 |
申请人 |
CREE RESEARCH, INC. |
发明人 |
CARTER, CALVIN H.;TSVETKOV, VALERI F.;GLASS, ROBERT C. |
分类号 |
C30B29/36;C30B23/00;(IPC1-7):C30B29/36 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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