发明名称 Growth of colorless silicon carbide crystals
摘要 Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal to levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.
申请公布号 US5718760(A) 申请公布日期 1998.02.17
申请号 US19960596526 申请日期 1996.02.05
申请人 CREE RESEARCH, INC. 发明人 CARTER, CALVIN H.;TSVETKOV, VALERI F.;GLASS, ROBERT C.
分类号 C30B29/36;C30B23/00;(IPC1-7):C30B29/36 主分类号 C30B29/36
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