发明名称 PRODUCTION METHOD OF COMPOSITION FOR FORMING COATING FILM FOR LITHOGRAPHY AND PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a production method of a composition for forming a coating film for lithography, with which metal impurities causing etching defects are significantly reduced.SOLUTION: Provided is a production method of a composition for forming a coating film for lithography, which is used in a semiconductor device manufacturing step, by using a production apparatus including a metal adsorbent and a filter, and includes: (1) a step to introduce a solvent used in the composition for forming the coating film for lithography into the production apparatus; (2) a step to adsorb metal impurities with the metal adsorbent by circulating the solvent in the production apparatus; (3) a step to prepare the composition for forming the coating film for lithography by adding a raw material of the composition for forming the coating film for lithography to the circulated solvent and making the raw material with the solvent uniform; and (4) a step to remove fine foreign matters with the filter by circulating the prepared composition for forming the coating film for lithography in the production apparatus.SELECTED DRAWING: Figure 1
申请公布号 JP2016206500(A) 申请公布日期 2016.12.08
申请号 JP20150089732 申请日期 2015.04.24
申请人 SHIN ETSU CHEM CO LTD 发明人 OGIWARA TSUTOMU;IWABUCHI MOTOAKI
分类号 G03F7/26;B05D1/32;B05D1/36;B05D3/10;B05D7/24;G03F7/11 主分类号 G03F7/26
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