FORMING METHOD OF SILICIDE PLUG

摘要

A forming method of silicide plug suitable for VLSI(very large scale integrated) circuits having high aspect ratio is disclosed. The method comprises the steps of: forming a contact hole(63) by patterning an insulating layer(62) deposited on a silicon substrate(61); depositing a blanket silicon layer(64) to fully fill the contact hole(63); forming a silicon plug(65) by etch-back the blanket silicon layer(64); depositing Pt film(66) on the entire surface of the resultant structure; forming a PtSix layer(67) by annealing the resultant structure; forming a silicide plug(67') in the contact hole(63) by removing anti-reaction Pt film(66).