发明名称 |
Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
摘要 |
A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers.
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申请公布号 |
US5757837(A) |
申请公布日期 |
1998.05.26 |
申请号 |
US19960731527 |
申请日期 |
1996.10.16 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
LIM, SUI F.;CHANG-HASNAIN, CONNIE J. |
分类号 |
G02F3/02;H01S5/026;H01S5/042;H01S5/06;H01S5/065;H01S5/183;H01S5/20;(IPC1-7):H01S3/19 |
主分类号 |
G02F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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