| 摘要 |
A light exposure mask which is used in the formation of a micro pattern, including a transparent substrate, a chromium pattern formed on the transparent substrate, and assistant patterns formed on portions of the chromium pattern where a rounding effect is generated. By virtue of the assistant patterns, it is possible to prevent the phenomenon that the pattern is reduced in size due to the rounding effect. Accordingly, it is possible to accurately form a pattern having a desirable size. Each assistant pattern has a bar, inverted-triangular or inverted-U shape.
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