发明名称 |
Contact layer of a thin film transistor |
摘要 |
The effect of a TFT having a Ge-Si contact layer is that a stable etching of the contact layer, without excessive etching of the semiconductor layer can be made due to a good selectivity when etching. Consequently, a uniform channel after a backetch step is obtained and the device performance can be improved.
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申请公布号 |
US5760420(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19960741744 |
申请日期 |
1996.10.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, JIN-HO |
分类号 |
H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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