THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD, ARRAY SUBSTRATE, AND DISPLAY DEVICE

摘要

A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.

主权项

1. A thin film transistor, of a gate bottom contact type, comprising a gate electrode and a gate insulation layer,
wherein the gate insulation layer is provided with a recess at a position corresponding to the gate electrode.