STT-MRAM DESIGN ENHANCED BY SWITCHING CURRENT INDUCED MAGNETIC FIELD

摘要

A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.

主权项

1. A method of constructing a magnetic memory cell comprising:
patterning a first electrode; fabricating a magnetic tunnel junction (MTJ) comprising a plurality of MTJ layers on the first electrode so that the first electrode has a first elongated portion extending laterally away from the MTJ by a sufficient lateral displacement to cause an MTJ switching current to flow in a first plane parallel the plurality of MTJ layers in the first electrode and; patterning a second electrode on the MTJ so that the second electrode has a second elongated portion extending laterally away from the MTJ by a sufficient lateral displacement to cause the MTJ switching current to flow in a second plane parallel the plurality of MTJ layers in the first electrode; and controlling a switching current induced magnetic field by configuring the first elongated portion and the second elongated portion to direct mutually additive portions of the switching current induced magnetic field through the MTJ.