| 摘要 |
PROBLEM TO BE SOLVED: To reduce an augmentation in the effective area of a cell array region and to avoid the generation of a failure of the formation of an HSG-Si film on storage node electrodes, by a method wherein a dummy region is provided on the periphery of the cell array region and a dummy electrode is provided on the dummy region. SOLUTION: A dummy region 153 is provided on the periphery of a cell array region 151 and, moreover, a peripheral circuit region 152 is provided in such a way as to encircle the region 153. The upper surfaces and side surfaces of all storage node electrodes 134 on the region 151 are covered with an HSG-Si film. At this point, a failure of the formation of the HSG-Si film occurs on the side surfaces and upper surface, of a dummy electrode 135 which are located on the side of the region 152 but the HSG-Si film is formed on the side surfaces and upper surfaces, of the electrode 135 which are located on the side of the region 151, without the occurrence of the failure on the side surfaces and upper surface of the electrode 135. Moreover, the region 153 is effectively used as the peripheral circuit region without providing a second active region 103 on this region 153. As a result, the effective area of the region 151 is made narrower as much as 2×2 rows than that of the region 151 in the case where a dummy cell is provided on the periphery of the region 151, and a failure of the formation of the HSG-Si film on the upper surfaces and side surfaces of the electrodes 134 can be avoided from occurring.
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