发明名称 |
Storage module and method for adaptive burst mode |
摘要 |
A storage module and method for adaptive burst mode are provided. In one embodiment, a storage module is provided comprising a memory and a controller. The controller is configured to receive a plurality of write commands from a host controller in communication with the storage module, store the plurality of write commands in a command queue in the storage module, and choose one of a plurality of burst modes in which to operate the memory based on how many write commands are stored in the command queue. |
申请公布号 |
US9471254(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201414254393 |
申请日期 |
2014.04.16 |
申请人 |
SanDisk Technologies LLC |
发明人 |
Shaharabany Amir;Heller Tal;Oshinsky Hadas;Levi Enosh;Zilberstein Einav Pnina;Hahn Judah Gamliel |
分类号 |
G06F12/00;G06F3/06;G06F13/28;G06F12/02 |
主分类号 |
G06F12/00 |
代理机构 |
Brinks Gilson & Lione |
代理人 |
Brinks Gilson & Lione |
主权项 |
1. A method for adaptive burst mode, the method comprising:
performing the following in a storage controller of a storage module having a memory in operative communication with the storage controller:
receiving a plurality of write commands from a host in communication with the storage module, wherein the write commands contain pointers to locations in a host that store data to be written in the memory in response to the write commands;choosing one of a plurality of burst modes in which to operate the memory based on how many write commands are received from the host, wherein each burst mode supports a different data storage rate for storing data in the memory; andrequesting data to be transferred from the locations in the host specified by the pointers to the storage module at a rate determined by the data storage rate of the chosen burst mode; wherein the memory comprises a silicon substrate and a plurality of memory cells forming at least two memory layers vertically disposed with respect to each other to form a monolithic three-dimensional structure, wherein at least one memory layer is vertically disposed with respect to the silicon substrate. |
地址 |
Plano TX US |