发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a rectangular semiconductor chip having a main surface, a stripe-form semiconductor element forming portion formed in parallel to one of sides of the semiconductor chip to cross the main surface, a first groove portion formed along one of sides of the semiconductor element forming portion in a longitudinal direction, a second groove portion formed along the other side of the semiconductor element forming portion in the longitudinal direction, the second groove portion including a hollow space which is enlarged in substantially a central portion, a surface electrode formed on at least part of an upper portion of the semiconductor element forming portion, an external lead connecting terminal electrode formed in the hollow space, a wiring formed on part of a bottom surface and a side surface, which is adjacent to stripe-form portion, of the second groove portion, for electrically connecting the surface electrode with the terminal electrode, a first dummy electrode formed at least on the main surface of the semiconductor chip to face the semiconductor element forming portion with the first groove portion disposed therebetween, and a second dummy electrode formed on the main surface of the semiconductor chip to face the semiconductor element forming portion with the second groove portion disposed therebetween.
申请公布号 US5880487(A) 申请公布日期 1999.03.09
申请号 US19970901432 申请日期 1997.07.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FURUKAWA, CHISATO;MATSUYAMA, TAKAYUKI
分类号 H01L21/60;H01S5/00;H01S5/02;H01S5/042;H01S5/227;H01S5/343;(IPC1-7):H01L33/00 主分类号 H01L21/60
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