Method for making semiconductor nanometer-scale wire using an atomic force microscope

摘要

The present invention provides a method for making semiconductor nanometer-scale wire. The method comprises the steps of: forming a nitride film on a semiconductor substrate by implanting a nitrogen ions at a high temperature; forming a nitride film pattern with several nanometer line width and spaced by several nanometer therebetween by using an Atomic Force Microscope; forming a silicon oxide film by selectively thermal-oxidizing an exposed portion of the semiconductor substrate; removing the nitride film pattern by using the Atomic Force Microscope; forming a semiconductor layer by using Molecular Beam Epitaxy method on the surface of the silicon oxide film and on the surface of the semiconductor substrate exposed by removing the nitride film pattern; and selectively removing the silicon oxide film and the semiconductor layer on the surface of the silicon oxide film through thermal treatment.