| 摘要 |
An n-type thermoelectric alloy from the (Bi2Te3)-(Sb2Te3)-(SbSe3) psuedo-ternary alloy system with the elements Bi and Sb present in an atomic ratio of 21-35:5-1 9. The n-type alloy has a figure of merit of approximately Z=3.4x 10 -3/K and can be us ed to create a thermoelectric device which achieves a maximum temperature difference .DELTA.T o f 79.2K between the hot and cold junctions of the device. The alloy is grown from the me lt into a single crystal using, for example, a vertical Bridgman furnace. The thermoelectr ic device includes a p-type material and the new n-type material with ohmic contacts place d between the materials and on each end of the device. The ohmic contacts include the elem ents Bi, Sn, and Sb. In addition, a layer of Ni is applied between the material and the ohmic contact. |
