发明名称 |
Laser processing apparatus and laser processing process |
摘要 |
A laser processing process which comprises laser annealing a silicon film 2 mu m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
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申请公布号 |
US5891764(A) |
申请公布日期 |
1999.04.06 |
申请号 |
US19960739192 |
申请日期 |
1996.10.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ISHIHARA, HIROAKI;NAKASHITA, KAZUHISA;OHNUMA, HIDETO;TANAKA, NOBUHIRO;ADACHI, HIROKI |
分类号 |
B23K26/04;H01L21/20;H01L21/77;H01L21/822;H01L21/84;(IPC1-7):H01L21/00 |
主分类号 |
B23K26/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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