摘要 |
Method of passivating a surface of an integrated circuit by; a) completely fabricating ferroelectric devices in the circuit, b) depositing a passivation layer over the entire surface comprising a ceramic material selected from doped and undoped titanates, zirconates, niobates, tantalates, stannates, hafnates, and manganates and having a Mohs hardness rating of 7 or over. |
申请人 |
RAMTRON INTERNATIONAL CORP., COLORADO SPRINGS, COL., US |
发明人 |
ARGOS, GEORGE, JR., AUSTIN, TX 78781, US;SPANO, JOHN D., AUSTIN, TX 78760, US;TRAYNOR, STEVEN D., COLORADO SPRINGS, CO 80919, US |