发明名称 |
TENSILE SOURCE DRAIN III-V TRANSISTORS FOR MOBILITY IMPROVED N-MOS |
摘要 |
An n-MOS transistor device and method for forming such a device are disclosed. The n-MOS transistor device comprises a semiconductor substrate with one or more replacement active regions formed above the substrate. The replacement active regions comprise a first III-V semiconductor material. A gate structure is formed above the replacement active regions. Source/Drain (S/D) recesses are formed in the replacement active region adjacent to the gate structure. Replacement S/D regions are formed in the S/D recesses and comprise a second III-V semiconductor material having a lattice constant that is smaller than the lattice constant of the first III-V semiconductor material. The smaller lattice constant of the second III-V material induces a uniaxial-strain on the channel formed from the first III-V material. The uniaxial strain in the channel improves carrier mobility in the n-MOS device. |
申请公布号 |
EP3087609(A1) |
申请公布日期 |
2016.11.02 |
申请号 |
EP20130900120 |
申请日期 |
2013.12.23 |
申请人 |
INTEL CORPORATION |
发明人 |
GLASS, GLENN A.;MURTHY, ANAND S.;MOHAPATRA, CHANDRA S. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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