Method of making floating gate based memory device

摘要

Semiconductor memory device and method is provided for a stacked gate type flash semiconductor memory device. The semiconductor memory device improves programming and erasing operation efficiency. A gate oxide layer and a floating gate are formed to be stacked on a substrate. A first dielectric layer and a control gate are formed to be stacked on the floating gate. A second dielectric layer is formed on both sides of the floating gate and first and second semiconductor sidewalls are formed on the second dielectric layer on the both sides of the floating gate. Impurity regions are formed in the substrate at the both sides of the floating gate and a wire layer is formed to contact with the semiconductor sidewalls and each of the impurity regions.