发明名称 |
Semiconductor device and method for forming the same |
摘要 |
In a field effect type device having a thin film-like active layer, there is provided a thin film-like semiconductor device including a top side gate electrode on the active layer and a bottom side gate electrode connected to a static potential, the bottom side gate electrode being provided between the active layer and a substrate. The bottom side gate electrode may be electrically connected to only one of a source and a drain of the field effect type device. Also, the production methods therefor are disclosed.
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申请公布号 |
US5917221(A) |
申请公布日期 |
1999.06.29 |
申请号 |
US19940351135 |
申请日期 |
1994.11.30 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKEMURA, YASUHIKO |
分类号 |
H01L27/12;H01L21/336;H01L21/70;H01L21/77;H01L21/8238;H01L21/84;H01L27/01;H01L27/092;H01L29/417;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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